{"id":1263,"date":"2018-02-01T17:03:18","date_gmt":"2018-02-01T17:03:18","guid":{"rendered":"https:\/\/athis-consulting.com\/news\/?p=1263"},"modified":"2018-09-14T21:11:50","modified_gmt":"2018-09-14T21:11:50","slug":"iemn-shows-more-than-1400-v-on-allos-new-gan-on-si-epiwafer-product","status":"publish","type":"post","link":"https:\/\/athis-technologies.com\/news\/innovation\/manufacturing\/2018\/iemn-shows-more-than-1400-v-on-allos-new-gan-on-si-epiwafer-product\/","title":{"rendered":"IEMN shows more than 1400 V on ALLOS\u2019 new GaN-on-Si epiwafer product"},"content":{"rendered":"<p>Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS\u2019 upcoming GaN-on-Si epiwafer product for 1200 V devices.<\/p>\n<p>A team around Dr. Farid Medjdoub from IEMN research institute in France has made devices and conducted measurements on two different GaN-on-Si epiwafer products supplied by ALLOS Semiconductors of Germany. One is a prototype of ALLOS\u2019 upcoming product specifically designed for 1200 V device applications. With this epiwafer IEMN achieved over 1400 V for vertical and 1600 V for lateral (grounded) breakdown. The other epiwafer is ALLOS\u2019 established product for 600 V applications which equally showed very high breakdown voltages of 1200 V and more for both lateral and vertical measurements.<\/p>\n<p>The new epiwafer product for 1200 V device applications is from an ongoing internal development program at ALLOS. Its strong performance results from an innovative structure combining ALLOS\u2019 unique strain-engineering and high crystal quality approach with additional measures to suppress leakage and enhance breakdown voltage further. This was achieved without compromising on other essential parameters like crystal quality or wafer bow and without introducing carbon-doping. Epi growth was conducted on a standard Aixtron G5 MOCVD reactor.<\/p>\n<p><a href=\"https:\/\/www.i-micronews.com\/images\/Media\/Compound_Semi_\/News_Feb_2018\/Allos.png\" target=\"_blank\" rel=\"noopener\"><img loading=\"lazy\" decoding=\"async\" src=\"https:\/\/www.i-micronews.com\/images\/Media\/Compound_Semi_\/News_Feb_2018\/Allos.png\" alt=\"Allos\" width=\"500\" height=\"374\" \/><\/a><\/p>\n<p>Already at the International Forum on Wide Bandgap Semiconductors (IFWS) in Beijing . ALLOS showed device results from an industry partner using ALLOS\u2019 600 V epiwafer. With a mature device design and measurement setup for up to 1000 V leakage values of 0.003 \u00b5A\/mm\u00b2 at 600 V and of 0.033 \u00b5A\/mm\u00b2 at 1000 V were achieved. \u201cThis feedback by our partner was great news for us as it was another confirmation for the capability of our technology for 600 V applications\u201d explains\u00a0<strong>Dr. Atsushi Nishikawa<\/strong>, CTO of ALLOS. \u201cNow the big question was at which voltage above 1000 V the physical breakdown occurs and whether we are on track with our development in the 1200 V domain too.\u201d<\/p>\n<p>The answer is now available with the results shown by IEMN. It used simplified device design and processes allowing a much faster feedback than from an industrial process. On a prototype of ALLOS\u2019 new epiwafer product for 1200 V devices IEMN achieved more than 1400 V for vertical and 1600 V for lateral (grounded) breakdown voltage (Figure 1 (a) and 2 (b) respectively). Supplementing characterization with a floating measurement setup resulted in a lateral breakdown of more than 2000 V with 12 \u00b5m contact distance (Figure 1 (c)). Saturation of lateral floating breakdown occurred at 12 \u00b5m contact distance for the 7 \u00b5m thick epi-stack with breakdown already more than 1100 V for 4 \u00b5m contact distance (Figure 1 (d)).<\/p>\n<p>Putting these results into perspective\u00a0<strong>Dr. Farid Medjdoub<\/strong>\u00a0from IEMN explains: \u201cWith over 1400 V for vertical and 1600 V for lateral breakdown with substrate grounded ALLOS\u2019 epiwafer favorably compares to all the samples we have measured so far from various industry and research partners. Furthermore, the results we have seen indicate that the device performance is very uniform over the wafer, which is a very important characteristic to qualify for actual device production.\u201d<\/p>\n<p>On ALLOS\u2019 600 V epiwafer product IEMN achieved 1200 V for vertical and 1500 V for lateral (grounded) breakdown voltage. Both epiwafer products are not doped with carbon, which is often used by GaN-on-Si makers to enhance isolation but has negative impacts on crystal quality and dynamic switching behavior. Both products are available with 675 \u00b5m thickness for 150 mm wafer diameter and 725 \u00b5m thickness for 200 mm. Bow for all ALLOS epiwafer products is tightly controlled at below 30 \u00b5m.<\/p>\n<p>\u201cThe results now available show that we are already at 1.7 MV\/cm laterally and 2 MV\/cm vertically \u2013 and we have a program to realize further improvements on epiwafer-level. Now is the time to establish a strong partnership with an industrial partner also in the 1200 V product range.\u201d\u00a0says\u00a0<strong>Burkhard Slischka<\/strong>, CEO of ALLOS. \u201cAs we are a pure epiwafer technology provider without own device making we are seeking a close cooperation with an experienced power electronics player to exploit the opportunities for their 1200 V GaN-on-Si based applications. With our technology GaN-on-Si has the potential to effectively compete with SiC performance at a fraction of the wafer cost.\u201d<\/p>\n<p><a href=\"http:\/\/www.allos-semiconductors.com\/news\/en\/iemn-shows-1400-volt\/\" target=\"_blank\" rel=\"noopener\">Full article<\/a><\/p>\n<p>Source:\u00a0<a href=\"http:\/\/www.allos-semiconductors.com\/\" target=\"_blank\" rel=\"noopener\">http:\/\/www.allos-semiconductors.com\/<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS\u2019 upcoming GaN-on-Si epiwafer product for 1200 V devices. A team around Dr. Farid Medjdoub from IEMN research institute in France has made devices and conducted measurements on two different GaN-on-Si epiwafer products supplied by ALLOS Semiconductors [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":1266,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"amp_status":"","_jetpack_memberships_contains_paid_content":false,"footnotes":"","jetpack_publicize_message":"","jetpack_publicize_feature_enabled":true,"jetpack_social_post_already_shared":true,"jetpack_social_options":{"image_generator_settings":{"template":"highway","enabled":false}}},"categories":[242],"tags":[],"jetpack_publicize_connections":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v22.8 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>IEMN shows more than 1400 V on ALLOS\u2019 new GaN-on-Si epiwafer product - AthisNews<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/athis-technologies.com\/news\/innovation\/manufacturing\/2018\/iemn-shows-more-than-1400-v-on-allos-new-gan-on-si-epiwafer-product\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"IEMN shows more than 1400 V on ALLOS\u2019 new GaN-on-Si epiwafer product - AthisNews\" \/>\n<meta property=\"og:description\" content=\"Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS\u2019 upcoming GaN-on-Si epiwafer product for 1200 V devices. 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