{"id":1259,"date":"2018-02-28T16:54:38","date_gmt":"2018-02-28T16:54:38","guid":{"rendered":"https:\/\/athis-consulting.com\/news\/?p=1259"},"modified":"2018-08-25T20:54:30","modified_gmt":"2018-08-25T20:54:30","slug":"gan-systems-announces-worlds-highest-current-rated-gan-power-transistor","status":"publish","type":"post","link":"https:\/\/athis-technologies.com\/news\/innovation\/manufacturing\/2018\/gan-systems-announces-worlds-highest-current-rated-gan-power-transistor\/","title":{"rendered":"GaN Systems announces world\u2019s highest current rated GaN Power transistor"},"content":{"rendered":"<p>GaN Systems, made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry\u2019s most powerful line of high-performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages of GaN can be applied to much higher power levels in the automotive, industrial, and renewable energy industries.This pioneering product will be showcased at the upcoming Applied Power Electronics Conference &amp; Exposition (APEC) in San Antonio, Texas on March 4-8, 2018 in Booth #1041.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-1261\" src=\"https:\/\/athis-consulting.com\/news\/wp-content\/uploads\/2018\/05\/Untitled-Design-3-1030x773-300x225.png\" alt=\"\" width=\"300\" height=\"225\" srcset=\"https:\/\/athis-technologies.com\/news\/wp-content\/uploads\/2018\/05\/Untitled-Design-3-1030x773-300x225.png 300w, https:\/\/athis-technologies.com\/news\/wp-content\/uploads\/2018\/05\/Untitled-Design-3-1030x773-768x576.png 768w, https:\/\/athis-technologies.com\/news\/wp-content\/uploads\/2018\/05\/Untitled-Design-3-1030x773-1024x768.png 1024w, https:\/\/athis-technologies.com\/news\/wp-content\/uploads\/2018\/05\/Untitled-Design-3-1030x773-600x450.png 600w, https:\/\/athis-technologies.com\/news\/wp-content\/uploads\/2018\/05\/Untitled-Design-3-1030x773.png 1030w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/p>\n<p>This pioneering product will be showcased at the upcoming Applied Power Electronics Conference &amp; Exposition (APEC) in San Antonio, Texas on March 4-8, 2018 in Booth #1041.<\/p>\n<p>Gan Systems\u2019 120 A, 650 V GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives. This transistor, with twice the current capability of GaN Systems\u2019 highest rated current part, allows customers to effectively double the power processing for the same volume.<\/p>\n<p>The product (GS-065-120-1-D), sold as a die to customers building modules, is the lowest RDS(on), highest current 650 V GaN HEMT in the power semiconductor industry. Modules are an important form factor in high power electronics constituting up to 40 percent of the market based on form factor. Customers will use this die product in half-bridge, full-bridge, and six pack module topologies to create enhanced, high-power designs.<\/p>\n<p>\u201cThis is the most pivotal GaN product on the market to be optimized for modules and is compatible with both embedded and traditional module technology,\u201d stated\u00a0<strong>Jim Witham<\/strong>, CEO of GaN Systems. \u201cAs an extension of our flagship product, it encompasses all the benefits of GaN technology and our approach to GaN power transistors \u2013 ease of use, high power density, and high efficiency \u2013 enabling power systems that are smaller in size and lower cost with unprecedented power levels.\u201d<\/p>\n<p><a href=\"https:\/\/gansystems.com\/newsroom\/gan-systems-announces-worlds-highest-current-rated-gan-power-transistor\/\" target=\"_blank\" rel=\"noopener\">Full article<\/a><\/p>\n<p>Source:\u00a0<a href=\"http:\/\/gansystems.com\/\" target=\"_blank\" rel=\"noopener\">http:\/\/gansystems.com\/<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>GaN Systems, made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry\u2019s most powerful line of high-performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages of GaN can be applied to much higher power levels in the automotive, industrial, and renewable [&hellip;]<\/p>\n","protected":false},"author":3,"featured_media":1260,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"amp_status":"","_jetpack_memberships_contains_paid_content":false,"footnotes":"","jetpack_publicize_message":"","jetpack_publicize_feature_enabled":true,"jetpack_social_post_already_shared":true,"jetpack_social_options":{"image_generator_settings":{"template":"highway","enabled":false}}},"categories":[242],"tags":[],"jetpack_publicize_connections":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v22.8 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>GaN Systems announces world\u2019s highest current rated GaN Power transistor - AthisNews<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/athis-technologies.com\/news\/innovation\/manufacturing\/2018\/gan-systems-announces-worlds-highest-current-rated-gan-power-transistor\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"GaN Systems announces world\u2019s highest current rated GaN Power transistor - AthisNews\" \/>\n<meta property=\"og:description\" content=\"GaN Systems, made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry\u2019s most powerful line of high-performance GaN transistors. 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