{"version":"1.0","provider_name":"AthisNews","provider_url":"https:\/\/athis-technologies.com\/news","author_name":"Kaitlyn Becker","author_url":"https:\/\/athis-technologies.com\/news\/author\/john-m\/","title":"Cree, Wolfspeed, Infineon: SiC and GaN power and radio-frequency devices are key for 5G and transport electrification - AthisNews","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"IXeWlwKO1M\"><a href=\"https:\/\/athis-technologies.com\/news\/innovation\/wireless-telecom\/2018\/1438\/\">Cree, Wolfspeed, Infineon: SiC and GaN power and radio-frequency devices are key for 5G and transport electrification<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/athis-technologies.com\/news\/innovation\/wireless-telecom\/2018\/1438\/embed\/#?secret=IXeWlwKO1M\" width=\"600\" height=\"338\" title=\"&#8220;Cree, Wolfspeed, Infineon: SiC and GaN power and radio-frequency devices are key for 5G and transport electrification&#8221; &#8212; AthisNews\" data-secret=\"IXeWlwKO1M\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/athis-technologies.com\/news\/wp-content\/uploads\/2018\/05\/Screen-Shot-2018-05-30-at-00.47.57.png","thumbnail_width":1210,"thumbnail_height":798,"description":"Compound semiconductors are back. Several very important trends are pushing adoption of compound semiconductor devices in key industries. These include the emergence of fifth generation (5G) wireless networking protocols, autonomous driving and robotic cars, transport electrification and augmented and virtual reality (AR\/VR). These applications are pushing the adoption of 3D sensing, improved power module efficiencies [&hellip;]"}